配信開始日: 2016年6月24日 Simulation of wide bandgap power devices has always posed convergence challenges. In addition to this, the emphasis is shifting to accuracy and calibration of models in relation to manufacturing data. This webinar will focus on simulation of silicon carbide (SiC), gallium nitride (GaN) and gallium oxide (Ga2O3) power devices. For each case, simulation approach and results will be discussed. We will also cover electro-thermal simulation of single-event effects (SEE) and resulting thermal-mechanical stress in SiC power devices, including Schottky diodes, and the latest progress and successful validation of the process simulation capabilities for wide bandgap materials.
Dr. Marek Turowski is a Senior Applications Engineer at Silvaco TCAD Division in Santa Clara, California. He has over 25 years of experience in modeling, simulation, and technology computer-aided design (TCAD), multi-domain (electrical, optical, electromagnetic, thermal, and mechanical) analysis, design, and optimization of semiconductor devices and integrated circuits (ICs). He is author or co-author of over 200 papers published in journals and conference proceedings. Senior Member of IEEE. In 1998-2013 he was with CFD Research Corporation (CFDRC) in Huntsville, Alabama, where he led the development of TCAD device simulation tools; in 2013-2015 with Robust Chip Inc. in Pleasanton, California. He led numerous projects involving TCAD for semiconductor devices and ICs, including various environmental effects studies (funded by US Government Agencies, Aerospace industry, NASA, and others).
He received his M.S. and Ph.D. degrees in Electronics Engineering from the Technical University of Lodz, Poland, in 1983 and 1992, respectively. He was a post-doc at the University of Sydney, Australia (1992- 93) and at the University of Kentucky, Lexington, USA (1996-97).